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2 edition of x-ray topographical study of the perfection of single crystals of gallium arsenide found in the catalog.

x-ray topographical study of the perfection of single crystals of gallium arsenide

Paul W. Hutchinson

x-ray topographical study of the perfection of single crystals of gallium arsenide

dissertation [presented forthe]M.Sc. Degree in Applied Solid State Physics.

by Paul W. Hutchinson

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Published by Brighton College of Technology, Department of Applied Physics in Brighton .
Written in English


Edition Notes

ContributionsBrighton College of Technology. Department of Applied Physics.
ID Numbers
Open LibraryOL13743584M

  KEYWORDS: Crystals, Hard x-rays, Spatial resolution, X-ray astronomy, Astronomy, Gamma radiation Read Abstract + Hard X-ray astronomy is a crucial field for understanding physical processes occurring in several celestial objects, characterized by extreme physical conditions and strong gravity regime, but still poorly explored. X-ray methods in the study of defects in single crystals,. [J Auleytner] formatting rules can vary widely between applications and fields of interest or study. The specific requirements or preferences of your reviewing publisher, classroom teacher, institution or organization should be applied.

KEYWORDS: Sensors, Crystals, X-rays, Gallium antimonide, Infrared radiation, Antimony, Gallium, Tellurium Read Abstract + In this paper we report our success in increasing length of n-type region and decreasing EPD in doped GaSb crystals grown with new oriented seed method. The first textbook for teaching this method to users with little mathematical background logically presents the theory and fundamentals in an easily comprehensible, self-contained way. The result is a must-have for advanced undergraduate students, as well as masters and graduate students and other users of single-crystal X-ray crystallography from many various disciplines.

@article{osti_, title = {pAlGaAs--pGaAs--nGaAs solar cells with efficiencies of 19% at AM 0 and 24% at AM 1. 5}, author = {Andreev, V.M. and Larionov, V.R. and Rumyantsev, V.D. and Fedorova, O.M. and Shamukhamedov, S.S.}, abstractNote = {In the present study we compared the photoelectric characteristics of solar cells whose nGaAs epitaxial layers were doped with tin and tellurium. Single crystal materials are finding more use in industrial applications everyday. From the microelectronics industry which uses silicon and gallium arsenide single crystal substrates in integrated circuit production, to the aerospace and power generation industries which are producing single crystal, nickel based alloy, turbine blades, there is a need to fully characterize these materials.


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X-ray topographical study of the perfection of single crystals of gallium arsenide by Paul W. Hutchinson Download PDF EPUB FB2

This study, which wifi be published in due course [61, has revealed that strain-free, perfect crystals of large dimensions (up to 2 X 1 X cm3) can only be pre- pared under stringently controlled equilibrium condi- tions. This paper presents a brief report of our initial experiments on the characterization of these crystals using X-ray transmission topography [7].Cited by: 4.

Not Available adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86ACited by: 4. The diffraction profiles (rocking curves) of perfect crystals like silicon and gallium arsenide have a very narrow intrinsic half-width down to 2″, so that it is possible to detect the small changes in lattice constant typically related with processes like epitaxy, diffusion and by: 2.

The structure perfection of Te-doped GaAs single crystal grown in space has been investigated by X-ray diffraction, TEM and cathodoluminescence. The individual diffraction spots which are obtained in single crystal transmission or back-reflection x-ray patterns contain a fine structure that can be matched on a point by point basis with the crystal surface appearance and with the internal strain pattern of the underlaying crystal by: 6.

Most publications are devoted to the study of defect images in semiconductor single crystals (germanium, indium antimonide, gallium arsenide, etc.). Interest in defects was initially connected with the problems of the practical application of these materials in the electronics industry, because defects strongly affected their electric by: 3.

Request PDF | Slip system analysis and X-ray topographic study on β-Ga2O3 | Slip system and possible dislocation characters in a wide-bandgap semiconductor β-Ga2O3 have been studied. The. The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at °K.

The frequencies of normal modes of vibration propagating in the [ζ00], [ζζζ], and [0ζζ] crystal directions have been determined with a precision of between 1 and 25 per. Also X-ray topographic studies on GaPO 4 have been carried out by Capelle et al.

[] to study twinning in GaPO4 crystals. Dielectric Properties of Gallium Phosphate The influence of the growth rate on the quality of the GaPO 4 crystals has been studied through IR spectrometry by Cochez et al. () []. X-ray topography observations are performed and allow the measurement of the critical layer dislocations first form by glide of grown-in substrate dislocations.

X-ray topography of gallium arsenide Apart from the work of Angilello et al(), at least five other x-ray topographic studies have been carried out on GaAs. These will now he outlined to demonstrate the utility of the technique, some of the results also being significant for this investigation.

X-ray topography is the general term for a family of x-ray diffraction imaging techniques capable of providing information on the nature and distribution of structural defects such as dislocations, inclusions/precipitates, stacking faults, growth sector boundaries, twins, and low-angle grain boundaries in single-crystal materials.

From the Cited by: The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made. Element-specific Surface X-ray Diffraction Study of GaAs Surfaces Gallium arsenide is a semiconductor showing excellent performance in optoelectronic and high- frequency devices.

It plays a critical role in today's highly networked society, being used in File Size: KB. Double crystal x-ray topography using a synchrotron radiation source has been used to measure the lattice distortions present in 50mm diameter samples of () semi-insulating LEC gallium arsenide.

Crucible-semiconducor interactions during crystal growth from the melt in space. et a/., Synchrotron topographic study of defects in liquid-encapsulated Czochra/ski-grown semi-insulating gallium arsenide wafers.

l Growth,Author: Caroline Dale Moore. Diffraction topographic images ("topographies") record the intensity profile of a beam of X-rays (or, sometimes, neutrons) diffracted by a crystal.

A topography thus represents a two-dimensional spatial intensity mapping of reflected X-rays, i.e. the spatial fine structure of a Laue reflection. In this paper we describe an approach to the problem, using multiple Bragg reflection X-ray methods to analyse suitable samples of gallium arsenide of appropriate crystalline perfection.

In order to obtain unambiguous results the samples have to fullfil several by: Crystal defects of GaAs thin films deposited by metalorganic vapour phase epitaxy on high-quality Ge substrates are studied by synchrotron X-ray topography.

The GaAs thin films were measured to have dislocations cm 2, which is a similar number to what. Triple crystal x‐ray diffraction analysis of chemical‐mechanical polished gallium arsenide Journal of Applied Phys ( High‐resolution triple crystal x‐ray diffraction has been used to monitor the magnitude of diffuse scattering from chemical‐mechanical (CM) polished GaAs.

Highly perfect germanium obtained from Cited by:. Single crystals of the conventional electronic materials silicon and gallium arsenide are grown dislocation-free from molten sources by means of the 'necking' process, 19) But SiC single crystals are usually produced by a gas-phase growth method20) in which the necking process is not suitable, because rapid increase of crystal diameter is File Size: KB.Gallium arsenide (GaAs) is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells.

The first known operational use of GaAs solar cells in space was for the Venera 3 mission, launched in Chemical formula: GaAs.Gallium Arsenide Microwave Amplifier. This is one of the micro-circuits inside a Celeritek CTR CPW microwave transceiver seen up close (see previous sample for an overall view).

At microwave frequencies the shape of everything matters, and signals a nearly as happy to travel through air as they are through wire.